| 摘要 |
<p>In step 602, the grid of a wafer supplied is approximated by, for example, up to third degree of function fitting. In step 612, a residual error between the position of the sample shot area by the function and an actual position is compared to a predetermined threshold value and according to the comparison result, it is decided whether to perform GCM measurement in the function mode of the subroutine 614 or measurement in the map mode of the subroutine 616. In addition to this, according to the temperature change of each wafer in a lot (step 622) and a random error fluctuation between wafers (step 624), it is decided whether to extract a non-linear component from the wafer.</p> |
