| 摘要 |
<P>PROBLEM TO BE SOLVED: To enhance flexural strength of a semiconductor chip by increasing an R-shaped curvature radius at the edge of the rear surface of a semiconductor chip in CMP (Chemical Mechanical Polishing). <P>SOLUTION: In chemical mechanical polishing equipment 10 for removing work distortion by polishing the rear surface of a semiconductor chip obtained by cutting off a semiconductor wafer like a lattice on the surface of a polishing pad after interposing a polishing liquid 25 containing free abrasive grain, the thickness of the polishing pad 16 is ≥3mm, and a groove 16a of ≥2.5mm depth is formed at the whole surface of the polishing pad. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
