| 摘要 |
PROBLEM TO BE SOLVED: To solve the problem wherein the potential of a substrate becomes unstable due to excessive voltage generated, when a voltage at a connecting point between a P-switch and an N-switch is lower than the grounding potential. SOLUTION: This switching regulator is formed on a P substrate connected to a first grounding voltage, and comprises a PMOS transistor, an NMOS transistor, an inductance and a smoothing capacitor. The switching regulator also comprises an N well, connected to a power supply voltage between the P substrate and a P well, that is connected to a second grounding voltage and forms the NMOS transistor. COPYRIGHT: (C)2006,JPO&NCIPI
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