SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE AND METHOD OF MANUFACTURING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a method of manufacturing a nonvolatile memory with a new cell structure. SOLUTION: A MISFETQm which constitutes the nonvolatile memory is composed of a gate electrode 10a which is formed on a gate insulating film, an n+type semiconductor region 13 (drain) in which one end extends to a lower part of the gate electrode 10a, an n+type semiconductor region 15 (high concentration source) which is formed so as to offset to the gate electrode 10a, and an n-type semiconductor region 11 (low concentration source) in which one end extends to the lower part of the gate electrode 10a. In the gate insulating film, the drain side is composed of a silicon oxide film 9 of one layer, and the source side is composed of an insulating film of three layers in which a silicon oxide film 7, a silicon nitride film 8, and a silicon oxide film 9 are laminated. The writing of the memory cell is performed by setting the drain to be higher potential rather than that of the source, and infusing a hot electron which is generated in the end of the low concentration source into the silicon nitride film which constitutes a part of the gate insulating film. COPYRIGHT: (C)2006,JPO&NCIPI