发明名称 MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To manufacture a semiconductor substrate having a high product yield by performing temperature interlock control of a wafer that has already been transferred to a boat and hence reducing thermal stress. SOLUTION: A method for manufacturing the semiconductor device comprises an insertion process for inserting the boat 3 in which a plurality of wafers 4 are placed into a heating oven 1, where a temperature control zone 2 is heated by a plurality of heaters dispersed into a plurality of zones (U, CU, CL, L); a heating process for performing prescribed treatment of the wafers 4 at the heating oven 1 after the insertion process; a withdrawal process for withdrawing the boat 3 from the heating oven 1 after the treatment process; and a cooling process for cooling the wafers 4 after the withdrawal process. Then, in the insertion process and withdrawal process, the temperature of the wafers 4 is monitored by a noncontact temperature sensor and the heating of a plurality of heaters is controlled so that a temperature gradient is generated in a plurality of zones of a temperature control zone 2, thus preventing the thermal stress of the wafers 4. COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2006080410(A) 申请公布日期 2006.03.23
申请号 JP20040264835 申请日期 2004.09.13
申请人 HITACHI KOKUSAI ELECTRIC INC 发明人 NAKANO MINORU
分类号 H01L21/205;H01L21/22;H01L21/324 主分类号 H01L21/205
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