| 摘要 |
PROBLEM TO BE SOLVED: To reduce dispersion of a heat history applied to a semiconductor apparatus when manufacturing it. SOLUTION: The manufacturing method of a semiconductor is provided with a process (S10) for thermally treating a semiconductor substrate in normal pressure and oxidizing atmosphere, and a process (S14) of thermally treating the semiconductor substrate in normal pressure and inert atmosphere. In the thermal treatment in the oxidizing atmosphere, a thermal treatment time and a thermal treatment temperature are changed based on the variation of atmospheric pressure at least. A thermal treatment time in the inert atmosphere is fixed based on the thermal treatment time and the thermal treatment temperature in the oxidizing atmosphere. In the process of the thermal treatment in the inert atmosphere, it is desirable that the thermal treatment temperature is nearly equal to the thermal treatment temperature in the oxidizing atmosphere. It is possible to change the thermal treatment time based on the variation of the atmospheric pressure at least in the thermal treatment in the oxidizing atmosphere, and to set the thermal treatment time so as to nearly fix the sum of the thermal treatment time in the inert atmosphere and that in the oxidizing atmosphere in the process of the thermal treatment in the inert atmosphere. COPYRIGHT: (C)2006,JPO&NCIPI
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