| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor laser device which is improved in heat dissipating properties through the suppression of a mechanical stress. SOLUTION: The semiconductor laser is equipped with a ridge which includes a first clad layer 6 formed on an active layer 5 and a second clad layer 8a arranged on the first clad layer 6, a pair of current inhibition layers 12a and 12b confronting each other on the first clad layer 6 through the ridge 11 interposed between them, and metal dummy ridges 13a and 13b arranged on the paired current inhibition layers 12a and 12b apart from the ridge 11. COPYRIGHT: (C)2006,JPO&NCIPI
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