Sensor element for converting radiation energy into an electric signal has a semiconductor component/transistor with an active semiconductor material area as a sensor zone

摘要

A semiconductor component/transistor (T) has an active semiconductor material area (A) as a sensor zone (SZ). The active semiconductor material area in the sensor zone is created from/with an organic semiconductor material (70). The transistor is formed on a substrate's (20) surface area (20a) and has a gate area (G) made from a gate material (30) embedded in gate insulation (GOX).