| 摘要 |
<p>An adaptive plasma source, and a method for processing a semiconductor wafer using the same are disclosed. The adaptive plasma source comprises a first planar hushing equipped at an upper center of a reaction chamber defining a reaction space for processing a semiconductor wafer so as to face a planar electrode equipped at a lower portion of the reaction chamber, and a coil assembly spirally extending from the first bushing at an upper portion of the reaction chamber and surrounding the first bushing. The adaptive plasma source allows an etching process to be performed by freely controlling etching characteristics of a coupled plasma source and an inductively coupled plasma source according to a method for processing a semiconductor wafer which will be performed, thereby enabling the etching process having different conditions to be performed in a single apparatus.</p> |
