| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of forming a relaxation Si<SB>1-X</SB>Ge<SB>X</SB>(0<x<1) layer, capable of reducing a cost and improving the properties of a film by reducing the hydrogen injection dose and/or the annealing temperature and the time. SOLUTION: The method of forming the relaxing Si<SB>1-X</SB>Ge<SB>X</SB>(0<x<1) layer with high germanium content in a semiconductor device according to this invention, comprises the steps of preparing a silicon substrate (12); depositing a distorted Si<SB>1-X</SB>Ge<SB>X</SB>(0<x<1) layer (14); implanting ions in the distorted SiGe layer (16) wherein the ions include silicon ions and ions chosen from among ion groups consisting of boron and helium, and further implanting H<SP>+</SP>ions (18); carrying out annealing to relax the distorted SiGe layer (20), thereby, forming a first relaxation SiGe layer, and completing the semiconductor device. COPYRIGHT: (C)2006,JPO&NCIPI
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