METHOD FOR PRODUCTION OF TRICHLOROSILANE, METHOD FOR PRODUCTION OF SILICON AND SILICON FOR USE IN THE PRODUCTION OF TRICHLOROSILANE

摘要

The present invention relates to a method for the production of trichlorosilane by reaction of silicon with HCI gas at a temperature between 250 and 1100°C, and a pressure of 0,1-30 atm in a fluidized bed reactor, in a stirred bed reactor or a solid bed reactor, where the silicon supplied to the reactor contains less than 100 ppm manganese. The invention further relates to a method for producing silicon for use in the production of trichlorosilane by reaction of silicon with HCI gas, said silicon containing less than 100 ppm manganese.