METHOD AND DEVICE FOR OPERATING SINGLE LINE CHARGE-TRAPPING MEMORY CELL

摘要

PROBLEM TO BE SOLVED: To read a single line of memory cells having a charge-trapping structure by selecting part of the memory cells selected by a word line.

SOLUTION: A part of the memory cells is selected by turning on one of the pass transistors at either end of the line of the memory cells. The charged state of the above selected part is determined by measuring the current in the bit line connected to both the pass transistors.

COPYRIGHT: (C)2006,JPO&NCIPI