| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor probe where a resistance chip is formed at an end of a cantilever having no alignment margin, and to provide a manufacturing method therefor. SOLUTION: The semiconductor probe comprises the half quadrangular pyramid-like resistance chip 30 that is doped with a first impurity; the cantilever 41 where the resistance chip 30 is positioned on a free end thereof; a resistance region 36 at the tip end of the resistance chip 30, where the first impurity and a second impurity a different polarity from the first impurity are light doped; and a first electrode semiconductor region 32 and a second electrode semiconductor region 34, wherein the second impurity is heavily doped in the sloping surface of the resistance chip 30, and they are formed mutually separate, and electrically connected to the resistance region 36. COPYRIGHT: (C)2006,JPO&NCIPI
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