| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor apparatus, a semiconductor manufacturing apparatus and the semiconductor apparatus, in which the roughness of a copper film surface after the etching treatment is reduced, and which can be performed in a short time and in a proper precision in few steps, in a copper film surface etching method, in which the copper film is oxidized and the oxide product is eliminated by an acid, alkali or the like. SOLUTION: The method has a step to deposit a wiring metal on a wiring groove or a contact hole formed in an insulating film on a semiconductor substrate, and fill the wiring groove or the contact hole, a step to expose the insulating film by polishing the wiring metal, a step to clean the semiconductor substrate, and a step to recess-etch the surface of the wiring metal embedded at the wiring groove or the contact hole. A main component of chemicals used in at least two steps of the polishing step, the cleaning step and the recess-etching step, is the same. COPYRIGHT: (C)2006,JPO&NCIPI
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