| 摘要 |
PROBLEM TO BE SOLVED: To provide a CMOS image sensor and its manufacturing method, capable of improving light receiving characteristics such as low illuminance characteristics, by implanting impurity ion in the part where the silicon lattice structure of a trench inner wall in an element separation region is damaged, to prevent a photodiode from being damaged, for protecting the surface of a photodiode region. SOLUTION: The manufacturing method includes a stage where at least first and second pad films are formed on a p-type semiconductor substrate where an active region and an element separation region are formed, a stage where at least first and second pad films in the element separation region are removed and an exposed semiconductor substrate is selectively removed to form a trench, a stage to form a first p-type impurity region of a trench inner wall, a stage to form an insulating film for element separation over the entire surface of the substrate to fill the trench, a stage in which the insulating film for element separation is so removed as to remain only in the trench region and the second pad film is removed, and a stage to form a photodiode region by implanting n-type ion in the active region. COPYRIGHT: (C)2006,JPO&NCIPI
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