发明名称 LOGIC CIRCUIT DEVICE AND ITS MANUFACTURING METHOD
摘要 PROBLEM TO BE SOLVED: To provide a logic circuit device by which design is easily changed, such as for making higher utilization efficiency of transistor devices, for making higher wiring efficiency to operate at a high speed operation, and for wiring to prevent useless leak at an electrode of a transistor to reduce power consumption. SOLUTION: The logic circuit device includes a first metal interconnection, a second metal interconnection and a 1 VIA. A plurality of unit cells 1 arranged on a semiconductor substrate 6 include a plurality of the transistor devices, the first metal interconnection having a wiring pattern isolated in each electrode of the transistor devices is formed on the upper layer of the cells, and a second metal interconnection is provided on the first metal interconnection and has a wiring pattern in which wiring for each usage is overlapped with the wiring pattern of the first metal interconnection when viewed from the upper layer. In the wiring for each usage, each electrode is connected by a logic circuit constituted by combination of the transistor devices, and the 1 VIA electrically connects the wiring patterns of the first metal interconnection and the second metal interconnection according to connection relations of the transistor devices in the logic circuit constituted by the unit cells. COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2006080436(A) 申请公布日期 2006.03.23
申请号 JP20040265374 申请日期 2004.09.13
申请人 RENESAS TECHNOLOGY CORP 发明人 HARAGUCHI MASARU;DEGUCHI MITSUHIRO;SHIBUYA KOJI;NISHIJIMA SATORU
分类号 H01L27/118;H01L21/3205;H01L21/82;H01L21/822;H01L23/52;H01L27/04;H03K19/00;H03K19/096;H03K19/173 主分类号 H01L27/118
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