发明名称 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE AND ITS MANUFACTURING APPARATUS
摘要 PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device including a MOS transistor which realizes formation of a gate insulating film with less variations in equivalent silicon oxide film thickness and with less characteristic fluctuations, and also to provide an apparatus for manufacturing the semiconductor device. SOLUTION: The method comprises the steps of depositing the film of an insulative material on the surface of a semiconductor substrate, measuring the thickness of the film or the thickness and composition of the film, setting nitrifying or oxidizing conditions, and nitrifying or oxidizing the film on the basis of the set nitrifying or oxidizing conditions. COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2006080372(A) 申请公布日期 2006.03.23
申请号 JP20040264149 申请日期 2004.09.10
申请人 TOSHIBA CORP 发明人 INUMIYA SEIJI;SATO MOTOYUKI;KANEKO AKIO;SEKINE KATSUYUKI;EGUCHI KAZUHIRO
分类号 H01L21/318;H01L21/31;H01L21/66;H01L29/78 主分类号 H01L21/318
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