摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device including a MOS transistor which realizes formation of a gate insulating film with less variations in equivalent silicon oxide film thickness and with less characteristic fluctuations, and also to provide an apparatus for manufacturing the semiconductor device. SOLUTION: The method comprises the steps of depositing the film of an insulative material on the surface of a semiconductor substrate, measuring the thickness of the film or the thickness and composition of the film, setting nitrifying or oxidizing conditions, and nitrifying or oxidizing the film on the basis of the set nitrifying or oxidizing conditions. COPYRIGHT: (C)2006,JPO&NCIPI
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