| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for not only preventing the mobility of electrons and electron holes from lowering at driving but also enabling the formation of a polycrystalline silicon TFT with uniform characteristics. SOLUTION: This method comprises a step for forming a buffer film 11 and a non-crystal silicon film sequentially on a glass substrate 10, a step for crystallizing the non-crystalline silicon film and forming a polycrystalline silicon film 12 with multiple projections, a step for forming an active pattern with two projections at both sides of a gate electrode formation area, a step for forming a barrier film not covering all protections, a step for implanting dopants (ions) entirely and forming a source electrode 16 in either film of two polycrystalline silicon films 12 at both sides of the gate electrode formation area and a drain electrode 17 in the other film, a step for removing the barrier, a step for forming a gate insulating film 18 entirely and a step for forming a gate electrode 19 between the source electrode 16 and the drain electrode 17. COPYRIGHT: (C)2006,JPO&NCIPI
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