| 摘要 |
PROBLEM TO BE SOLVED: To solve the problem in the prior art that, when the diameter of a silicon substrate becomes large in the formation of a metal gate electrode, the variations become large in size and shape in the wafer surface and between roughness and fineness. SOLUTION: The manufacturing method of a semiconductor device can form an electrode having excellent uniformity of the size of tungsten gate etching in a wafer surface. To be more specific, according to this method, a silicon oxide film 102 as a gate insulating film, a high dielectric film (High-k film) 103, a tungsten film 104 as a gate electrode material, a silicon nitride film 105 as a mask film, are sequentially formed on a silicon substrate 101. Then, an anti-reflective coating 106 is applied and a pattern is formed according to a known lithography technology. After the anti-reflective coating 106 and the silicon nitride film 105 are etched on the general condition, the tungsten film is etched on the condition that the ratio of the plasma density at the center and the periphery of the silicon substrate is 3-4:1 until the remaining film becomes 3-5 nm in thickness, and finally the remaining tungsten film is etched on the condition that the ratio of the plasma density of center to periphery amounts to 1:1. COPYRIGHT: (C)2006,JPO&NCIPI
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