发明名称 INTEGRATED CIRCUIT ON HIGH PERFORMANCE CHIP
摘要 A method of fabricating a die containing an integrated circuit, including active components and passive components, includes producing a first substrate containing at least one active component of active components and a second substrate containing critical components of the passive components, such as perovskites or MEMS, and bonding the two substrates by a layer transfer. The method provides an improved monolithic integration of devices such as MEMS with transistors.
申请公布号 EP1636130(A2) 申请公布日期 2006.03.22
申请号 EP20040767421 申请日期 2004.06.23
申请人 COMMISSARIAT A L'ENERGIE ATOMIQUE 发明人 JOLY, JEAN-PIERRE;ULMER, LAURENT;PARAT, GUY
分类号 B81B7/00;B81B7/02;H01L21/02;H01L21/20;H01L21/822;H01L21/98;H01L25/16;H01L27/06 主分类号 B81B7/00
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