发明名称 |
INTEGRATED CIRCUIT ON HIGH PERFORMANCE CHIP |
摘要 |
A method of fabricating a die containing an integrated circuit, including active components and passive components, includes producing a first substrate containing at least one active component of active components and a second substrate containing critical components of the passive components, such as perovskites or MEMS, and bonding the two substrates by a layer transfer. The method provides an improved monolithic integration of devices such as MEMS with transistors. |
申请公布号 |
EP1636130(A2) |
申请公布日期 |
2006.03.22 |
申请号 |
EP20040767421 |
申请日期 |
2004.06.23 |
申请人 |
COMMISSARIAT A L'ENERGIE ATOMIQUE |
发明人 |
JOLY, JEAN-PIERRE;ULMER, LAURENT;PARAT, GUY |
分类号 |
B81B7/00;B81B7/02;H01L21/02;H01L21/20;H01L21/822;H01L21/98;H01L25/16;H01L27/06 |
主分类号 |
B81B7/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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