| 摘要 |
<p>The invention is intended, in a vertical type plasma processing apparatus, to prevent damage to process objects due to a plasma, and to suppress the generation of sputter due to hollow cathode discharge and the plasma, without lowering the radical utilization efficiency. A part of the inner surface of the side wall of a processing vessel 32 is provided with a vertically extending recess 74. A plasma gas supplied from a plasma gas nozzle 62 disposed in the recess 74 is converted into a plasma in an area PS between plasma electrodes 76 in the recess 74, and leaves the recess 74 toward the process objects W.</p> |
