| 摘要 |
A semiconductor device comprises a first semiconductor chip (232) having first electrodes (234); a second semiconductor chip having second electrodes, the second electrodes arranged with a different spacing pitch in comparison with the first electrodes; interconnecting pattern (238) provided on the first semiconductor chip; a resin layer (236) formed on said first semiconductor chip (232) to relieve a stress applied to the first semiconductor chip; and external terminals (240-246) provided on the first semiconductor chip, wherein the first and second semiconductor chips are stacked with their surfaces on which the first and second electrodes are formed facing each other, a first portion of the interconnecting pattern extends between the first and second semiconductor chips, a second portion of the interconnecting pattern (238) is formed under the resin layer (236), the external terminals (240-246) are provided on the interconnecting pattern, the resin layer is provided around the external terminals, and the first and second electrodes are bonded to the interconnecting pattern. <IMAGE> |
