发明名称 Method and apparatus for determining plasma impedance
摘要 A plasma processing system, method, and computer readable medium for measuring plasma impedance. The system includes a chamber configured to contain a plasma and including a chuck within an interior area of the chamber, the chuck including a support surface and a bottom surface, and a first voltage-current probe positioned at a first position located exterior to the chamber and on a radio-frequency transmission line between the chamber and a power source. The system also includes a simulation module connected to the first voltage-current probe and arranged to solve, based on measurements transmitted from the first voltage-current probe, a radio-frequency model of the radio-frequency transmission line between the first position and a second position located within the chamber.
申请公布号 US7015414(B2) 申请公布日期 2006.03.21
申请号 US20030673321 申请日期 2003.09.30
申请人 TOKYO ELECTRON LIMITED 发明人 MITROVIC ANDREJ S.
分类号 B23K10/00;B23K9/00;B23K9/02;H01J37/32;H01L;H05H1/46 主分类号 B23K10/00
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