| 发明名称 |
Group III nitride compound semiconductor device having a superlattice structure |
| 摘要 |
After one of layers constituting a superlattice structure is formed by an MOCVD method, NH<SUB>3 </SUB>gas is circulated together with H<SUB>2 </SUB>gas as a carrier gas to thereby perform a purge step. After the purge step, a next layer is formed.
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| 申请公布号 |
US7015515(B2) |
申请公布日期 |
2006.03.21 |
| 申请号 |
US20020163335 |
申请日期 |
2002.06.07 |
| 申请人 |
TOYODA GOSEI CO., LTD. |
发明人 |
TAKI TETSUYA;ASAI MAKOTO;SAWAZAKI KATSUHISA;KANEYAMA NAOKI;UEMURA TOSHIYA |
| 分类号 |
H01L29/15;C30B25/02;H01L21/205 |
主分类号 |
H01L29/15 |
| 代理机构 |
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