发明名称 |
Submount and semiconductor device |
摘要 |
A submount can mount on it a semiconductor light-emitting device with high bonding strength, and a semiconductor unit incorporates the submount. The submount comprises (a) a submount substrate, (b) a solder layer formed at the top surface of the submount substrate, and (c) a solder intimate-contact layer that is formed between the submount substrate and the solder layer and that has a structure in which a transition element layer consisting mainly of at least one type of transition element and a precious metal layer consisting mainly of at least one type of precious metal are piled up. In the above structure, the transition element layer is formed at the submount-substrate side. The semiconductor unit is provided with a semiconductor light-emitting device mounted on the solder layer of the submount. |
申请公布号 |
US7015583(B2) |
申请公布日期 |
2006.03.21 |
申请号 |
US20040512828 |
申请日期 |
2004.10.28 |
申请人 |
SUMITOMO ELECTRIC INDUSTRIES, LTD. |
发明人 |
ISHII TAKASHI;HIGAKI KENJIRO;TSUZUKI YASUSHI |
分类号 |
H01L21/52;H01L23/488;H01S5/02;H01S5/022;H01S5/024 |
主分类号 |
H01L21/52 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|