发明名称 Submount and semiconductor device
摘要 A submount can mount on it a semiconductor light-emitting device with high bonding strength, and a semiconductor unit incorporates the submount. The submount comprises (a) a submount substrate, (b) a solder layer formed at the top surface of the submount substrate, and (c) a solder intimate-contact layer that is formed between the submount substrate and the solder layer and that has a structure in which a transition element layer consisting mainly of at least one type of transition element and a precious metal layer consisting mainly of at least one type of precious metal are piled up. In the above structure, the transition element layer is formed at the submount-substrate side. The semiconductor unit is provided with a semiconductor light-emitting device mounted on the solder layer of the submount.
申请公布号 US7015583(B2) 申请公布日期 2006.03.21
申请号 US20040512828 申请日期 2004.10.28
申请人 SUMITOMO ELECTRIC INDUSTRIES, LTD. 发明人 ISHII TAKASHI;HIGAKI KENJIRO;TSUZUKI YASUSHI
分类号 H01L21/52;H01L23/488;H01S5/02;H01S5/022;H01S5/024 主分类号 H01L21/52
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