发明名称 |
Photodetector |
摘要 |
Quantum wire is formed on the bottom of a V-shaped groove in a V-grooved substrate as a channel between source and drain electrodes or as at least part of the channel. A photocarrier accumulation region is provided within the quantum wire or at a position connected to or adjacent to the quantum wire for accumulating charges generated when light shines onto a photosensitive region that comprises at least a clad layer that covers the quantum wire. A recess is provided in the upper clad layer to localize the photocarrier accumulation region. As a result, it is possible to provide a photodetector that exhibits high sensitivity, high speed and low power consumption in an expanded wavelength region. It is also possible to provide a photodetector capable of constructing core portions thereof by one-time selective growth.
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申请公布号 |
US7015453(B2) |
申请公布日期 |
2006.03.21 |
申请号 |
US20040889125 |
申请日期 |
2004.07.13 |
申请人 |
NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCEAND TECHNOLOGY |
发明人 |
OGURA MUTSUO;NAGAMUNE YASUSHI;SUGAYA TAKEYOSHI |
分类号 |
H01L29/06;H01L31/10;H01L31/00 |
主分类号 |
H01L29/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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