发明名称 |
Method of simultaneously making a pair of transistors with insulated gates having respectively a thin oxide and a thick oxide, and corresponding integrated circuit comprising such a pair of transistors |
摘要 |
A method of simultaneously fabricating a pair of insulated gate transistors respectively having a thin oxide and a thick oxide, and an integrated circuit including a pair of transistors of this kind. Forming low-doped NLDD areas of the thin oxide second transistor includes implanting a first dopant having a first concentration and implanting a second dopant having a second concentration lower than the first concentration. Forming low-doped areas NLDD of the first, thick oxide transistor includes only said implantation of the second dopant.
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申请公布号 |
US7015105(B2) |
申请公布日期 |
2006.03.21 |
申请号 |
US20020169237 |
申请日期 |
2002.06.27 |
申请人 |
STMICROELECTRONICS, S.A. |
发明人 |
BOISSONNET LAURENCE;GOLANSKI DOMINIQUE;RAUBER BRUNO;GRANIER ANDRE |
分类号 |
H01L21/8234;H01L21/265;H01L21/336;H01L27/088 |
主分类号 |
H01L21/8234 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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