发明名称 |
Fence-free etching of iridium barrier having a steep taper angle |
摘要 |
An Iridium barrier layer is between a contact plug and a bottom electrode of a capacitor. Etching is performed to pattern the bottom electrode and barrier layer using a fluorine-based recipe resulting in the formation of a first fence clinging to the sidewalls. Next the remaining barrier layer is etched using a CO-based recipe. A second fence is formed clinging to and structurally supported by the first fence. At the same time, the CO-based recipe etches away a substantial portion of the first fence to remove the structural support provided to the second fence. The second fence is therefore lifted-off from the sidewalls leaving the sidewalls substantially free of clinging fences. The etched barrier layer has a sidewall transition. The sidewalls have a relatively low taper angle above the sidewall transition and a relatively steep taper angle below the sidewall transition.
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申请公布号 |
US7015049(B2) |
申请公布日期 |
2006.03.21 |
申请号 |
US20030654376 |
申请日期 |
2003.09.03 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
EGGER ULRICH;ZHUANG HAOREN;STOJAKOVIC GEORGE;TOMIOKA KAZUHIRO |
分类号 |
H01L21/00;H01L21/02;H01L21/3213;H01L21/8246 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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