发明名称 |
Stress-relieved shallow trench isolation (STI) structure and method for forming the same |
摘要 |
A shallow trench isolation (STI) structure in a semiconductor substrate and a method for forming the same are provided. A trench is formed in a semiconductor substrate. A first dielectric layer is formed on sidewalls of the trench. The first dielectric layer is formed thicker at a top portion of the sidewalls than a bottom portion of the sidewalls and leaving an entrance of the trench open to expose the trench. A second dielectric layer is conformally formed on the first dielectric layer to close the entrance, thus forming a void buried within the trench. Thus, the stress between the trench dielectric layer and the surrounding silicon substrate during thermal cycling can be substantially reduced.
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申请公布号 |
US7015116(B1) |
申请公布日期 |
2006.03.21 |
申请号 |
US20040897601 |
申请日期 |
2004.07.23 |
申请人 |
INTEGRATED DEVICE TECHNOLOGY, INC. |
发明人 |
LO GUO-QIANG (PATRICK);SCHORR BRIAN;FOLEY GARY;LEE SHIH-KED |
分类号 |
H01L21/76;H01L21/762;H01L21/764 |
主分类号 |
H01L21/76 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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