发明名称 |
Method for fabricating a group III nitride semiconductor laser device |
摘要 |
A nitride semiconductor laser device using a group III nitride semiconductor also as a substrate offers excellent operation characteristics and a long laser oscillation life. In a layered structure of a group III nitride semiconductor formed on a GaN substrate, a laser optical waveguide region is formed elsewhere than right above a dislocation-concentrated region extending so as to vertically penetrate the substrate, and electrodes are formed on the top surface of the layered structure and on the bottom surface of the substrate elsewhere than right above or below the dislocation-concentrated region. In a portion of the top surface of the layered structure and in a portion of the bottom surface of the substrate right above and below the dislocation-concentrated region, dielectric layers may be formed to prevent the electrodes from making contact with those regions.
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申请公布号 |
US7015058(B2) |
申请公布日期 |
2006.03.21 |
申请号 |
US20040917514 |
申请日期 |
2004.08.13 |
申请人 |
SUMITOMO ELECTRIC INDUSTRIES, LTD. |
发明人 |
TAKATANI KUNIHIRO;ITO SHIGETOSHI;YUASA TAKAYUKI;TANEYA MOTOTAKA;MOTOKI KENSAKU |
分类号 |
H01L21/00;H01S5/02;H01S5/323 |
主分类号 |
H01L21/00 |
代理机构 |
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地址 |
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