发明名称 |
Active secondary exposure mask to manufacture integrated circuits |
摘要 |
A mask having a pattern to modify a circuitry feature that has been exposed in a radiation sensitive layer by transmitting modifying radiation to a region of the radiation sensitive layer containing the exposed circuitry feature is described. The mask may reduce subwavelength distortions and proximity effect distortions of the exposed circuitry feature. The mask may be used to manufacture a semiconductor device having circuitry that is based on the modified circuitry feature.
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申请公布号 |
US7014956(B2) |
申请公布日期 |
2006.03.21 |
申请号 |
US20020040772 |
申请日期 |
2002.01.04 |
申请人 |
INTEL CORPORATION |
发明人 |
CHEN FRED;FARNSWORTH JEFF;CHENG WEN-HAO |
分类号 |
G03F9/00;G03F1/00;G03F1/14 |
主分类号 |
G03F9/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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