| 摘要 |
The invention provides a process for forming a low k fluorine and carbon-containing silicon oxide dielectric material by reacting with an oxidizing agent one or more silanes containing one or more organofluoro silanes having the formula SiR<SUB>1</SUB>R<SUB>2</SUB>R<SUB>3</SUB>R<SUB>4</SUB>, where: (a) R<SUB>1 </SUB>is selected from H, a 3 to 10 carbon alkyl, and an alkoxy; (b) R<SUB>2 </SUB>contains at least one C atom bonded to at least one F atom, and no aliphatic C-H bonds; and (c) R<SUB>3 </SUB>and R<SUB>4 </SUB>are selected from H, alkyl, alkoxy, a moiety containing at least one C atom bonded to at least one F atom, and ((L)Si(R<SUB>5</SUB>)(R<SUB>6</SUB>))<SUB>n</SUB>(R<SUB>7</SUB>); where n ranges from 1 to 10; L is O or CFR<SUB>8</SUB>; each n R<SUB>5 </SUB>and R<SUB>6 </SUB>is selected from H, alkyl, alkoxy, and a moiety containing at least one C atom bonded to at least one F atom; R<SUB>7 </SUB>is selected from H, alkyl, alkoxy, and a moiety containing at least one C atom bonded to at least one F atom; and each R<SUB>8 </SUB>is selected from H, alkyl, alkoxy, and a moiety containing at least one C atom bonded to at least one F atom. Also provided is a low dielectric constant fluorine and carbon-doped silicon oxide dielectric material for use in an integrated circuit structure which contains: silicon atoms bonded to oxygen atoms; silicon atoms bonded to carbon atoms; and carbon atoms bonded to fluorine atoms; where the dielectric material also has a characteristic selected from: (a) the presence of at least one C-C bond; (b) the presence of at least one carbon atom bonded to from 1 to 2 fluorine atoms; and (c) the presence of at least one silicon atom bonded to from 0 to 2 oxygen atoms.
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