| 摘要 |
<p>Disclosed herein is a method for forming a gate electrode of a non-volatile memory device. In an etch process of a gate electrode for defining the gate electrode, the etch process is performed by selectively adding an addition gas containing carbon. This prevents undercuts from being formed on a sidewall of a control gate when a floating gate is etched. It is thus possible to form the gate electrode having a vertical profile.</p> |
