发明名称 СПОСОБ ИЗГОТОВЛЕНИЯ ПОЛУПРОВОДНИКОВЫХ ПРИБОРОВ
摘要 FIELD: semiconductor silicon device manufacture. ^ SUBSTANCE: proposed method for manufacturing semiconductor devices on crystal-oriented (100) silicon wafers involves organization of regions with semiconductor device layout components on one of silicon wafer sides and wafer division into chips, as well as wafer thinning by chemical etching in etchant selective for crystal orientation (100); in the course of manufacture shielding mask is formed prior to etching on underside of wafer to shield peripheral regions of wafer so that internal configuration of mask area periphery coincides with outer one of structures on face side of wafer. ^ EFFECT: enhanced yield. ^ 1 cl
申请公布号 RU2004129703(A) 申请公布日期 2006.03.20
申请号 RU20040129703 申请日期 2004.10.15
申请人 Закрытое акционерное общество "ИНТСЭТ" (RU) 发明人 Константинов Петр Борисович (RU);Концевой Юлий Абрамович (RU);Сопов Олег Вениаминович (RU)
分类号 H01L21/00 主分类号 H01L21/00
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