| 摘要 |
FIELD: computer engineering and integrated electronics; very large-scale integrated circuit components. ^ SUBSTANCE: proposed device has half-insulating GaAs substrate, input metal bus disposed under the latter to form Schottky junction, first AlGaAs region of second polarity of conductivity, first self-conductance AlGaAs region of spacer disposed under the latter, self-conductance GaAs region of first channel disposed under the latter, second AlGaAs region of second polarity of conductivity, second self-conductance AlGaAs region of spacer, output region of second polarity of conductivity, input, power, and zero-potential metal buses, isolating dielectric regions, self-conductance AlGaAs region of tunnel barrier, self-conductance InGaAs region of second channel, self-conductance AlGaAs region of second barrier, L-section power region of second polarity of conductivity, and Gamma-section zero-potential region of second polarity of conductivity; self-conductance GsAs region of first channel and self-conductance InGaAs region of second channel are vertically disposed relative to one another. ^ EFFECT: reduced space requirement for chip, enhanced speed, reduced change-over energy. ^ 1 cl, 3 dwg |
