MEMORY DEVICE

摘要

Memory device comprises a glass substrate (1), a layer of indium tin oxide (2), a layer of p type semiconductor (3), a layer of i type semiconductor (4), a layer of n type semiconductor (5) and a layer of spots of an electrically conducting material (6). Silicon is the preferred semiconductor. The device is conditioned by the application of a voltage sufficiently large to cause the structure to be permanently modified to reduce the electrical resistance of the layers. It is a feature of the device that no p and n layers are adjacent.