发明名称 CHEMICAL MECHANICAL POLISHING COMPOSITIONS FOR STEP-II COPPER LINER AND OTHER ASSOCIATED MATERIALS AND METHOD OF USING SAME
摘要 A CMP composition and process for planarization of a semiconductor wafer surface having a copper barrier layer portion, said composition comprising an oxidizing agent, a boric acid component, and an abrasive.
申请公布号 KR20060024775(A) 申请公布日期 2006.03.17
申请号 KR20057021585 申请日期 2005.11.11
申请人 ADVANCED TECHNOLOGY MATERIALS INC. 发明人 WRSCHKA PETER;BERNHARD DAVID;BOGGS KARL;DARSILLO MICHAEL
分类号 C09G1/02;H01L21/321 主分类号 C09G1/02
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