发明名称 SEMICONDUCTOR LASER DEVICE
摘要 PURPOSE:To flatten the surface grown extending over the whole surface by forming a pair of stepped sections at both ends of the surface of a substrate for a laser chip while holding a ridge. CONSTITUTION:Two parallel ridges 1a, 1b are formed on the surface of an n type substrate 1 and a pair of stepped sections 1c, 1d in parallel with the ridges on the outsides of the ridges. A first n type clad layer 2, a second non-doped active layer 3, a third p type clad layer 4 and a fourth n type cap layer 5 are grown continuously on the substrate 1. A p type impurity is diffused selectively to a section just above a groove section between the ridges on the substrate 1 from the surface grown, and the front of diffusion is made to reach to the layer 4. A p side ohmic electrode film 6 and a metallic film 7 for an n side ohmic electrode are formed. Consequently, the surface after growth can be flattened extending over the whole surface of a laser chip. Accordingly, the slip-off of the chip can be prevented, and a thermal resistance value can be reduced.
申请公布号 JPS60101984(A) 申请公布日期 1985.06.06
申请号 JP19830208231 申请日期 1983.11.08
申请人 MATSUSHITA DENKI SANGYO KK 发明人 HAMADA TAKESHI;WADA MASARU;ITOU KUNIO;SHIMIZU YUUICHI;TAJIRI FUMIKO
分类号 H01S5/00;H01S5/223 主分类号 H01S5/00
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