| 摘要 |
PURPOSE:To produce an E type FET without gate current by a method wherein a gate electrode is composed of metal-dielectric insulating film-noadditive semiconductor layer on an field effect transistor made of III-V compound. CONSTITUTION:An active layer 2 made of N type GaAs is formed on a semiconductor GaAs substrate 1 to grow a no-additive Ga0.6Al0.4As layer 3 on the layer 2. Then SiO2 4 and W5 are successively bonded on the layer 3 by sputtering process. Through these procedures, an E type FET without gate current may be produced to compose an E/D type circuit with large operational margin.
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