发明名称 |
METHOD FOR PROCESSING NITRIDE SEMICONDUCTOR CRYSTAL SURFACE AND NITRIDE SEMICONDUCTOR CRYSTAL OBTAINED BY SUCH METHOD |
摘要 |
A method for processing a nitride semiconductor crystal surface is characterized in that a process liquid (15) containing at least Na, Li or Ca is brought into contact with the surface of a nitride semiconductor crystal (11). The process liquid (15) may be a liquid containing at least Na whose Na content is 5-95 mol%. The process liquid (15) may be a liquid containing at least Li whose Li content is 5-100 mol%. A nitride semiconductor crystal obtained by such a method is also disclosed which has a maximum surface scratch depth of 0. 01 mum or less and an average degenerated layer thickness of 2 mum or less. Namely, the method for processing a nitride semiconductor crystal surface enables to reduce surface scratch depth and degenerated layer thickness, and the nitride semiconductor crystal obtained by such a method has a shallow surface scratch depth and a thin degenerated layer thickness.
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申请公布号 |
KR20060024772(A) |
申请公布日期 |
2006.03.17 |
申请号 |
KR20057021275 |
申请日期 |
2005.11.09 |
申请人 |
SUMITOMO ELECTRIC INDUSTRIES, LTD.;MORI YUSUKE |
发明人 |
MORI YUSUKE;NAKAHATA SEIJI;HIROTA RYU;ISHIBASHI KEIJI;SASAKI TAKATOMO |
分类号 |
H01L21/306;C30B29/38;C30B29/40;C30B33/00;C30B33/10 |
主分类号 |
H01L21/306 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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