发明名称 METHOD FOR MANUFACTURING WAFER LEVEL PACKAGE USING LASER IRRADIATION
摘要 PROBLEM TO BE SOLVED: To provide a method for manufacturing a wafer level package which can be sealed without having a thermal effect on a driving portion by joining a device wafer and lid wafer of the wafer level package using a laser. SOLUTION: The method for manufacturing the wafer level package includes steps S102, S104, and S106 where the device wafer is mounted on a mounting bed so that the metal strip of the device wafer faces upward and the lid wafer is mounted on the device wafer so that the metal strip of the lid wafer is aligned facing the metal strip of the device wafer; and a step S108 where a laser beam irradiates the whole package area so as to join the metal strips each other without having a thermal effect on the driving portion and seal the inside space between the upper/lower wafers and the metal strips; and a step S110 where the obtained structure is cut along the circumference of the joined metal strips. COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2006073977(A) 申请公布日期 2006.03.16
申请号 JP20040324357 申请日期 2004.11.08
申请人 SAMSUNG ELECTRO-MECHANICS CO LTD 发明人 SUNWOO KOOK HYUN;KWON JONG OH;LEE JOO HO
分类号 H01L23/02;H01L23/12 主分类号 H01L23/02
代理机构 代理人
主权项
地址