| 摘要 |
PROBLEM TO BE SOLVED: To provide a method and a device for treating a semiconductor wafer having a high cleanliness. SOLUTION: In an ozone-water treating process, a silicon wafer is treated by first ultrapure water containing an ozone gas. The first ultrapure water is refined by an ultraviolet pasteurization method. Overall organic matter carbon contents are contained in the first ultrapure water in 1 to 20μg/L. Consequently, the silicon wafer having the specified cleanliness is obtained. In an ultrapure-water rinsing process (a chemical washing process is contained as required), the silicon wafer is treated by second ultrapure water having a TOC value smaller than the first ultrapure water. The second ultrapure water is refined by an ultraviolet oxidation method, and the overall organic-matter carbon contents are 1μg/L or less. Accordingly, the silicon wafer having the high cleanliness is obtained. COPYRIGHT: (C)2006,JPO&NCIPI
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