发明名称 SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE
摘要 PURPOSE:To perform high integration, high density and high speed circuit in a layer of lower position in 3-dimensional IC having a photoelectric converter on the uppermost layer by providing an element having a drive capacity on the layer immediately lower from the converter. CONSTITUTION:In a 3-dimensional IC, the lowermost layer A is a memory, a layer B is a calculator, a layer C is a driver, and a layer D is a photoelectric converter. In this case, the layers A, B are designed for high density, high integration and high speed, and optimized in the process. On the other hand, the layer C is designed to have the maximum limit of the drive capacity, and the designing rule can be alleviated as compared with the layers B, A. On the other hand, the layer D converts the light input from the exterior into an electric signal, or converts an electric signal fed from the lower layer into a light. When the layer C is formed to alleviate the designing rule from the layers B, A, thereby strengthening the durability for the signal input from the exterior.
申请公布号 JPS611043(A) 申请公布日期 1986.01.07
申请号 JP19840120804 申请日期 1984.06.14
申请人 TOSHIBA KK 发明人 SAIGOU TAKASHI
分类号 H01L27/00;H01L27/06;H01L27/144;H01L31/0232 主分类号 H01L27/00
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