发明名称 |
Sensor using a GaN transistor |
摘要 |
The present invention uses a GaN transistor grown over a Si substrate, which is obtained by etching through lithography or a plasma etching; and is used as a pressure sensor with great sensitivity by utilizing the characteristic of piezoelectric effect of GaN with the ability of magnifying signals and providing very high sensitivity; and is integrated into an IC, or into a micro electro-mechanical system of Si semiconductor.
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申请公布号 |
US2006054927(A1) |
申请公布日期 |
2006.03.16 |
申请号 |
US20050143861 |
申请日期 |
2005.06.03 |
申请人 |
NATIONAL CENTRAL UNIVERSITY |
发明人 |
WANG WEN-KAI;SHI JIN-WEI;CHAN YI-JEN |
分类号 |
H01L31/0328;G01L7/10;H01L29/778 |
主分类号 |
H01L31/0328 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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