发明名称 |
Low temperature sintering ceramic composition for use in high frequency, method of fabricating the same and electronic component |
摘要 |
A low temperature sintering ceramic composition that can be sintered at a temperature equal to or less than 1000° C. and has low dielectric constant and dielectric loss in a high frequency region of 17 Ghz or more, an electronic component using the same and a method of fabricating the low temperature sintering ceramic are provided. The composition comprises MgO and SiO<SUB>2 </SUB>in sum total in the range of from 64.0 to 99.2% by mass; Bi<SUB>2</SUB>O<SUB>3 </SUB>in the range of from 0.4 to 33.0% by mass; Li<SUB>2</SUB>O in the range of from 0.4 to 3.0% by mass; and MgO and SiO<SUB>2 </SUB>are contained in the molar ratio of from 2:1 to 2:3.5, at least part thereof being contained as a complex oxide of Mg and Si.
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申请公布号 |
US2006058170(A1) |
申请公布日期 |
2006.03.16 |
申请号 |
US20050540014 |
申请日期 |
2005.06.22 |
申请人 |
NIKKO COMPANY |
发明人 |
KIDANI NAOKI;MIZUSHIMA KIYOSHI;TAKIMOTO MIKIO |
分类号 |
C03C10/04;C04B35/20;H01B1/16;H01B3/12 |
主分类号 |
C03C10/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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