发明名称 Low temperature sintering ceramic composition for use in high frequency, method of fabricating the same and electronic component
摘要 A low temperature sintering ceramic composition that can be sintered at a temperature equal to or less than 1000° C. and has low dielectric constant and dielectric loss in a high frequency region of 17 Ghz or more, an electronic component using the same and a method of fabricating the low temperature sintering ceramic are provided. The composition comprises MgO and SiO<SUB>2 </SUB>in sum total in the range of from 64.0 to 99.2% by mass; Bi<SUB>2</SUB>O<SUB>3 </SUB>in the range of from 0.4 to 33.0% by mass; Li<SUB>2</SUB>O in the range of from 0.4 to 3.0% by mass; and MgO and SiO<SUB>2 </SUB>are contained in the molar ratio of from 2:1 to 2:3.5, at least part thereof being contained as a complex oxide of Mg and Si.
申请公布号 US2006058170(A1) 申请公布日期 2006.03.16
申请号 US20050540014 申请日期 2005.06.22
申请人 NIKKO COMPANY 发明人 KIDANI NAOKI;MIZUSHIMA KIYOSHI;TAKIMOTO MIKIO
分类号 C03C10/04;C04B35/20;H01B1/16;H01B3/12 主分类号 C03C10/04
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