| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To prevent the ripple phenomenon of an internally-generated high voltage from occurring, relating to a semiconductor device that generates a ripple-free internal voltage. <P>SOLUTION: The semiconductor device includes a PMOS transistor connected between first and second power supply lines, a high-voltage generating circuit for supplying a high voltage to the first power supply line, a current bypass circuit for supplying a current to the second power supply line from the first power supply line, and a controller for controlling the current drive capacity of the PMOS transistor in response to the voltage of the second power supply line. In this way, a stabilized regulation voltage can be obtained by using a voltage regulator circuit to control a charge current stepwise. <P>COPYRIGHT: (C)2006,JPO&NCIPI</p> |
