| 摘要 |
PROBLEM TO BE SOLVED: To optionally set trigger voltages to ESDs of positive polarity and negative polarity. SOLUTION: A bidirectional type electrostatic discharge protection element uses a lateral SCR appearing in a manufacturing process of a semiconductor integrated circuit in such a form that it is provided with: NPN transistors 1 and 3 with collector electrodes connected commonly and emitter electrodes connected with terminals 1q and 1r of the semiconductor integrated circuit; and a PNP transistor 2 with base electrodes connected with the collector electrode connection terminals of the NPN transistors 1 and 3 and the bidirectional emitter electrodes connected with the corresponding base electrodes of the NPN transistors 1 and 3 and connected with the corresponding emitter electrodes of the NPN transistors 1 and 3 through resistive elements R1 and R2. With the NPN transistors 1 and 3, NMOS transistors 4 and 5 are integrally formed in parallel, respectively. Gate electrodes of the NMOS transistors 4 and 5 are connected with the corresponding emitter electrodes of the NPN transistors 1 and 3. COPYRIGHT: (C)2006,JPO&NCIPI
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