MAGNETORESISTANCE EFFECT ELEMENT, MAGNETIC HEAD, MAGNETIC RECORDING/REPRODUCING DEVICE, AND MAGNETIC MEMORY

摘要

PROBLEM TO BE SOLVED: To provide a magnetoresistance effect element exhibiting a high MR variation rate by controlling the magnitude of magnetic coupling between a pin layer and a free layer to assure magnetization rotation of the free layer with respect to an external magnetic field as a practical operation. SOLUTION: This magnetoresistance effect element comprises three or more metal magnetic layers, two or more connection layers provided between the three or more metal magnetic layers wherein the connection layer includes an insulating layer and current narrowing portions formed of a metal magnetic material penetrating this insulating layer, and electrodes for passing a current through the metal magnetic layers and the connection layers in the direction perpendicular to their surfaces. COPYRIGHT: (C)2006,JPO&NCIPI