| 摘要 |
PROBLEM TO BE SOLVED: To provide a composition for etching, wherein it gives no damage to a semiconductor material, such as silicon oxide, and it can selectively etch a hafnium compound, such as hafnium silicate and hafnium aluminate, and further, it prevents the sticking of etched hafnium, and moreover, it is flame-resistant and can be used safely. SOLUTION: A composition for etching constituted, containing fluoride, chloride, and complexing agent, or the a composition for etching constituted, containing silicon fluoride and phosphoric acid is used. The composition for etching constituted, containing silicon fluoride and phosphoric acid may, contain complexing agents and hydrogen peroxide. COPYRIGHT: (C)2006,JPO&NCIPI
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