| 摘要 |
PROBLEM TO BE SOLVED: To suppress the generation of a trap in a gate insulating film upon forming a shallow bonding diffusion layer by activation through irradiation of short wavelength light. SOLUTION: In the manufacture of a semiconductor device, a gate electrode is formed at first on a substrate through the gate insulating film. Impurity is poured to form the diffusion layer employing at least the gate electrode as a mask. On the other hand, fluorine ion is poured before or after pouring the impurity for forming the diffusion layer employing at least the gate electrode as the mask. Further, light having wavelength of about≤1,000 nm is irradiated for a period of time within about 1 ms. COPYRIGHT: (C)2006,JPO&NCIPI
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